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| inchange semiconductor isc product specification isc silicon npn power transistor BU415B description collector-emitter sustaining voltag- : v ceo(sus) = 400v(min) high switching speed applications designed for tv horizontal out put and high power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 6 v i c collector current-continuous 12 a i cm collector current-peak repetitive 15 a p c collector power dissipation @ t c =25 120 w t j junction temperature 200 t stg storage temperature range -65~200 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU415B electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ;i b = 0 400 v v (br)ebo emitter-base breakdown voltage i e = 1ma ;i c = 0 6 v i cbo collector cutoff current v cb = 400v; i e =0 0.1 ma i ebo emitter cutoff current v eb = 6v; i c =0 0.1 ma v ce( sat ) collector-emitter saturation voltage i c = 8a; i b = 2.5a b 3.3 v v be( sat ) base-emitter saturation voltage i c = 8a; i b = 2.5a b 2.2 v h fe dc current gain i c = 5a; v ce = 5v 4 isc website www.iscsemi.cn 2 |
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